Intel® Core™ Ultra 200S, Intel® Core™ Ultra 200S Plus ,Intel® Core™ Ultra 200HX and 200HX Plus Series Processors

Datasheet, Volume 1 of 2

ID Date Version Classification
832586 03/17/2026 Public
Document Table of Contents
LAM

DDR Electrical Power Gating

The DDR I/O of the processor supports Electrical Power Gating (DDR-EPG) while the processor is at C3 or deeper power state.

In C3 or deeper power state, the processor internally gates VDDQ and VDD2 for the majority of the logic to reduce idle power while keeping all critical DDR pins such as CKE in the appropriate state.

In C8 or deeper power state, the processor internally gates VCCSA for all non-critical state to reduce idle power.

In S3 or C-state transitions, the DDR does not go through training mode and will restore the previous training information.